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ZXMN10A08G
Absolute maximum ratings
Parameter
Drain-source voltage
Gate-source voltage
Symbol
V DSS
V GS
Limit
100
±20
Unit
V
V
Continuous drain current
@ V GS = 10V; T amb = 25°C (b)
@ V GS = 10V; T amb = 70°C (b)
@ V GS = 10V; T amb = 25°C (a)
I D
2.9
2.3
2.0
A
A
A
Pulsed drain current (c)
Continuous source current (body diode) (b)
Pulsed source current (body diode) (c)
Power dissipation at T amb =25°C (a)
Linear derating factor
Power dissipation at T amb =25°C (b)
Linear derating factor
Operating and storage temperature range
I DM
I S
I SM
P D
P D
T j , T stg
11
5
11
2
16
3.9
31
-55 to +150
A
A
A
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient (a)
Junction to ambient (b)
Symbol
R JA
R JA
Limit
62.5
32
Unit
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t
10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02,pulse width 300 s - pulse width limited by maximum junction
temperature.
Issue 1 - June 2006
? Zetex Semiconductors plc 2006
2
www.zetex.com
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